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Metal Floating Gate Memory Device With SiO2/HfO2 Dual-Layer as Engineered Tunneling Barrier
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2014.7
  • 页码：744-746
  • 相关项目：新型微电子器件集成的基础研究
作者： Han, Yulong|Li, Xinkai|Liu, Su|Liu, Ming|
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新型微电子器件集成的基础研究
期刊论文 98 会议论文 12
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