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A Surface Potential-Based Gate-Leakage Current Model for Organic Thin-Film Transistors
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：2015.12
  • 页码：4219-4224
  • 相关项目：新型微电子器件集成的基础研究
作者： Ji, Zhuoyu|Wang, Hong|Li, Ling|Liu, Ming|
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新型微电子器件集成的基础研究
期刊论文 98 会议论文 12
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