位置：成果数据库 > 期刊 > 期刊详情页
Physical model for electroforming process in valence change resistive random access memory
  • ISSN号：1569-8025
  • 期刊名称：Journal of Computational Electronics
  • 时间：2015.3
  • 页码：146-150
  • 相关项目：新型微电子器件集成的基础研究
作者： Lu, Nianduan|Lv, Hangbing|Liu, Ming|Liu, Su|
同期刊论文项目
新型微电子器件集成的基础研究
期刊论文 98 会议论文 12
同项目期刊论文
Response to "Comment on Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filam
A Surface Potential-Based Gate-Leakage Current Model for Organic Thin-Film Transistors
A 65-nm 1-Gb NOR floating-gate flash memory with less than 50-ns access time
Limitation of the concept of transport energy in disordered organic semiconductors
Universal carrier thermoelectric-transport model based on percolation theory in organic semiconducto
A model for the set statistics of rram inspired in the percolation model of oxide breakdown
Morphological control of GaAs/InAs radial heterostructure nanowires: From cylindrical to coherent qu
Combining Bottom-Up and Top-Down Segmentation: A Way to Realize High-Performance Organic Circuit
Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure (vol 105,
Superior Retention of Low-Resistance State in Conductive Bridge Random Access Memory With Single Fil
Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory
A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transisto
Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM
Field effect mobility model in oxide semiconductor thin film transistors with arbitrary energy distr
Multi-scale quantum point contact model for filamentary conduction in resistive random access memori
Investigation of charge loss characteristics of HfO2 annealed in N2 or O2 ambient
Effects of interfacial fluorination on performance enhancement of high-k-based charge trap flash mem
Investigation on the RESET switching mechanism of bipolar Cu/HfO 2/Pt RRAM devices with a statistica
Cycle-to-cycle intrinsic RESET statistics in HfO2-based unipolar RRAM devices
Set statistics in CBRAM device with Cu/HfO2/Pt structure
Uniformity improvement in 1T1R RRAM with gate voltage ramp programming
Polaron effect and energetic disorder dependence of Seebeck coefficient in organic transistors
Comparison between N2 and O2 anneals on the integrity of an Al2O3/Si3N4/SiO 2/Si memory gate stack
Three-state resistive switching in HfO2-based RRAM
Thermally assisted magnetic switching of a single perpendicularly magnetized layer induced by an in-
Physical origin of nonlinear transport in organic semiconductor at high carrier densities
Universal description of exciton diffusion length in organic photovoltaic cell
Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic
Analytical surface-potential compact model for amorphous-IGZO thin-film transistors
Comparison between N-2 and O-2 anneals on the integrity of an Al2O3/Si3N4/SiO2/Si memory gate stack
Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access
Effect of Pre-annealing to Blocking Oxide on the Performance of Dual Trapping-layer Engineered Charg
Effect of Damage in Source and Drain on the Endurance of a 65-nm-Node NOR Flash Memory
A simple and accurate method for measuring program/erase speed in a memory capacitor structure
Quantum-size effects in hafnium-oxide resistive switching
Degradation of Gate Voltage Controlled Multilevel Storage in One Transistor One Resistor Electrochem
Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm)
Improving resistance uniformity and endurance of resistive switching memory by accurately controllin
Impact of program/erase operation on the performances of oxide-based resistive switching memory
Effect of Pulse and dc Formation on the Performance of One-Transistor and One-Resistor Resistance Ra
Conduction mechanism of a TaOx-based selector and its application in crossbar memory arrays
Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory
Polaron effect dependence of thermopower in organic semiconductors
Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure
Thermoelectric Seebeck effect in oxide-based resistive switching memory
Charge carrier relaxation model in disordered organic semiconductors
A capacitor-free high PSR CMOS low dropout voltage regulator
Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO2-Based RRAM
In situ electron holography study of charge distribution in high-k charge-trapping memory
嵌入式闪存器件技术进展
Modified Transmission Line Model for Bottom-Contact Organic Transistors
Metal Floating Gate Memory Device With SiO2/HfO2 Dual-Layer as Engineered Tunneling Barrier
Investigation of Charge Loss Mechanism of Thickness-Scalable Trapping Layer by Variable Temperature
Compact model for organic thin-film transistor with Gaussian density of states
Investigation of LRS dependence on the retention of HRS in CBRAM
Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based res
An overview of the switching parameter variation of RRAM
Short-circuit current model of organic solar cells
In situ electron holography study of charge distribution in high-kappa charge-trapping memory
Operation methods of resistive random access memory
Low temperature atomic layer deposited HfO2 film for high performance charge trapping flash memory a
基于层次化片上网络的混合多播路由算法
基于多核处理器的多层感知神经网络设计和实现
一种改进的北斗卫星信号并行捕获方法
一种MIMO-OFDM系统信道估计简化方法
适用于IEEE802.11a/g的联合信道估计和均衡算法
硅纳米晶存储器的耐受性研究
基于短时相关和FFT的GPSL2C信号捕获算法
一种基于中频回放的跟踪通道设计与实现
适用于SBAS和Galileo卫星导航接收机的Viterbi译码器实现
一种新型的基于效用函数的LTE-A系统预编码资源调度算法