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Effect of Damage in Source and Drain on the Endurance of a 65-nm-Node NOR Flash Memory
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：2013.12
  • 页码：3989-3995
  • 相关项目：新型微电子器件集成的基础研究
作者： Yang, Yun|Qiu, Shengfen|Wu, Hanming|Liu, Ming|
同期刊论文项目
新型微电子器件集成的基础研究
期刊论文 98 会议论文 12
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