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Resistive switching mechanism of Ag/ZrO(2):Cu/Pt memory cell
  • ISSN号：0947-8396
  • 期刊名称：Appl. Phys. A: Mater. Sci. Proc.
  • 时间：0
  • 页码：915-919
  • 相关项目：纳米加工与新型半导体器件研究
作者： Long, Shibing| Liu, Qi| Lv, Hangbing| Li, Yingtao|Wang, Yan|Zhang, Sen|Xie, Hongwei| Liu, Ming|
同期刊论文项目
纳米加工与新型半导体器件研究
期刊论文 101 会议论文 13 获奖 2 专利 121
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