位置：成果数据库 > 期刊 > 期刊详情页
Differential conductance as a promising approach for rapid DNA sequencing with nanopore-embedded ele
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：0
  • 页码：-
  • 相关项目：纳米加工与新型半导体器件研究
作者： He, Yuhui|Shao, Lubing|Scheicher, Ralph H.|Grigoriev, Anton|Ahuja, Rajeev|Long, Shibing|Ji, Zhuoyu|Yu, Zhaoan|Liu, Ming|
同期刊论文项目
纳米加工与新型半导体器件研究
期刊论文 101 会议论文 13 获奖 2 专利 121
同项目期刊论文
Reset Statistics of NiO-Based Resistive Switching Memories
Investigation of resistive switching behaviours in WO(3)-based RRAM devices
Improvement of resistive switching characteristics in ZrO(2) film by embedding a thin TiO(x) layer
Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory a
Interface Effect on the Performance of Rectifier Based on Organic Diode
阻变存储器及其集成技术研究进展
Multilevel resistive switching with ionic and metallic filaments
Effect of high temperature annealing on the performance of MANOS charge trapping memory
Effects of high-temperature O-2 annealing on Al2O3 blocking layer and Al2O3/Si3N4 interface for MANO
自支撑透射光栅的设计、制作和测试
Performance enhancement of multilevel cell nonvolatile memory by using a bandgap engineered high-kap
Highly Stable Radiation-Hardened Resistive-Switching Memory
Low-Power and Highly Uniform Switching in ZrO(2)-Based ReRAM With a Cu Nanocrystal Insertion Layer
Titanium-tungsten nanocrystals embedded in a SiO2/Al2O3 gate dielectric stack for low-voltage operat
基于有机场效应晶体管的非挥发性存储器研究进展
A metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure for high-performance non-volatile memory application
Nonvolatile multilevel memory effect in Cu/WO3/Pt device structures
Improving the electrical performance of resistive switching memory using doping technology
3D Integration of CMOL Structures for FPGA Applications
Improvement of Resistive Switching Uniformity in TiO(x) Films by Nitrogen Annealing
FPGA Based on Integration of CMOS and RRAM
Resistive switching mechanism of Ag/ZrO(2):Cu/Pt memory cell
Unification of three multiphonon trap-assisted tunneling mechanisms
Improved Resistive Switching Uniformity in Cu/HfO(2)/Pt Devices by Using Current Sweeping Mode
An overview of resistive random access memory devices
CMOS Compatible Nonvolatile Memory Devices Based on SiO(2)/Cu/SiO(2) Multilayer Films
Improved charge trapping flash device with Al(2)O(3)/HfSiO stack as blocking layer
Optimization of silicon nanocrystals growth process by low pressure chemical vapor deposition for no
Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM
Enhanced DNA Sequencing Performance Through Edge-Hydrogenation of Graphene Electrodes
Analysis of trap generation during programming/erasing cycling in silicon nanocrystal memory devices
Resistive Switching Properties of Au/ZrO2/Ag Structure for Low-Voltage Nonvolatile Memory Applicatio
Reset Instability in Cu/ZrO(2):Cu/Pt RRAM Device
A novel junction-assisted programming scheme for Si-nanocrystal memory devices with improved perform
Programming resistive switching memory by a charged capacitor
有机非挥发性存储器的研究进展
有机场效应晶体管及其集成电路研究进展
Improvement of Resistive Switching Properties in ZrO2-Based ReRAM With Implanted Ti Ions
高k介质在浮栅型非挥发性存储器中的应用
Low-Voltage Organic Field-Effect Transistor With PMMA/ZrO2 Bilayer Dielectric
Resistive switching characteristics of MnOx-based ReRAM
3D CMOS/Molecular Hybrid Circuits
电荷俘获存储器中俘获层的研究进展
2000l/mm X射线镂空透射光栅的制备研究
Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory
基于I-V特性的阻变存储器的阻变机制研究
Unipolar resistive switching of Au+-implanted ZrO2 films
Nonvolatile memory devices based on organic field-effect transistors
ZrO2-Based Memory Cell With a Self-Rectifying Effect for Crossbar WORM Memory Application
Progress in rectifying-based RRAM passive crossbar array
"Spontaneous Electrolysis" and Simultaneously Assembly Hierarchy Nanostructures of Copper
Investigation on interface related charge trap and loss characteristics of high-k based trapping str
Improved speed and data retention characteristics in flash memory using a stacked HfO(2)/Ta(2)O(5) c
Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device
Effect of low constant current stress treatment on the performance of the Cu/ZrO2/Pt resistive switc
Effect of bandgap engineering on the performance and reliability of a high-k based nanoscale charge
掺杂技术对阻变存储器电学性能的改进
Response to "Comment on Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments
Growth of zinc blende GaAs/AlGaAs heterostructure nanowires on Si substrate by using AlGaAs buffer l
Comparison of tunneling current assisted by neutral and positive traps with finite ranged core-poten
Analysis and modeling of resistive switching statistics
Investigation of One-Dimensional Thickness Scaling on Cu/HfOx/Pt Resistive Switching Device Performa
Cycling-Induced Peak-Like Interface State Generation in Si-Nanocrystal Memory Devices
Advancements in organic nonvolatile memory devices
电荷俘获存储器阻挡层研究进展
复合型光子筛及其在大口径成像中的应用
光子筛的超分辨聚焦特性研究
EBL制备用于气体传感器的SAW延迟线的方法
A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications
A novel 2-T structure memory device using a Si nanodot for embedded application
电阻转变型非挥发性存储器概述
3333l/mmX射线全镂空自支撑透射光栅的制备与测试
Fabrication of a 256-bits organic memory by soft x-ray lithography
Study of top and bottom contact resistance in one organic field-effect transistor
Phase zone photon sieve
Investigation of resistive switching behaviours in WO3-based RRAM devices
Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer