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Low-Power and Highly Uniform Switching in ZrO(2)-Based ReRAM With a Cu Nanocrystal Insertion Layer
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：0
  • 页码：1299-1301
  • 相关项目：纳米加工与新型半导体器件研究
作者： Liu, Qi|Liu, Ming|Long, Shibing|Wang, Wei|Tanachutiwat, Sansiri|Li, Yingtao|Wang, Qin|Zhang, Manhong|Huo, Zongliang|Chen, Junning|
同期刊论文项目
纳米加工与新型半导体器件研究
期刊论文 101 会议论文 13 获奖 2 专利 121
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