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Improving the electrical performance of resistive switching memory using doping technology
  • ISSN号：1001-6538
  • 期刊名称：Chinese Science Bulletin
  • 时间：0
  • 页码：1235-1240
  • 分类：TQ575[化学工程—精细化工] TM862[电气工程—高电压与绝缘技术]
  • 作者机构：[1]College of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China, [2]Laboratory of Nano-Fabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029,China
  • 相关基金：This work was supported by the National Basic Research Program of Chi- na （2010CB934200, 2008CB925002）; the National Natural Science Foundation of China （60825403, 50972160）; the National High- Tech Research ＆ Development Program of China （2008AA031403, 2009AAO3Z306） .
  • 相关项目：纳米加工与新型半导体器件研究
作者： Wang Yan|Liu Ming|Liu Qi|Lu HangBing|Long ShiBing|Wang Wei|Li YingTao|Zhang Sen|Lian WenTai|Yang JianHong|
关键词： 掺杂技术, 电气性能, 电阻式, 记忆体, 兴奋剂, 随机存取存储器, 纳米晶体, 电铸工艺, non-volatile memory, resistive random access memory （RRAM）, doping technology
中文摘要：

在这篇论文，用做技术的抵抗随机的存取记忆(RRAM ) 的改进被总结并且分析。基于一台 Cu/ZrO2/Pt 设备，有 Ti 离子的三做技术， Cu，和 Cu nanocrystal 分别地，在实验被采用。比作一台 undoped 设备，改进集中于四个点：消除 electroforming 过程，减少操作电压，改进电的一致性，并且增加设备产量。另外，高电阻状态的热稳定性和更好的保留被做的技术也完成。我们证明那种做的技术是改进 RRAM 的电的表演的一个有效方法。

英文摘要：

In this paper, improvements of resistive random access memory （RRAM） using doping technology are summarized and analyzed. Based on a Cu/ZrO2/Pt device, three doping technologies with Ti ions, Cu, and Cu nanocrystal, respectively, are adopted in the experiments. Compared to an undoped device, improvements focus on four points： eliminating the electroforming process, reduc- ing operation voltage, improving electrical uniformity, and increasing device yield. In addition, thermal stability of the high re- sistance state and better retention are also achieved by the doping technology. We demonstrate that doping technology is an effec- tive way of improving the electrical performance of RRAM.

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