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ZrO2-Based Memory Cell With a Self-Rectifying Effect for Crossbar WORM Memory Application
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：0
  • 页码：344-346
  • 相关项目：纳米加工与新型半导体器件研究
作者： Zuo, Qingyun|Liu, Ming|Long, Shibing|Yang, Shiqian|Liu, Qi|Shao, Lubing|Wang, Qin|Zhang, Sen|Li, Yingtao|Wang, Yan|
同期刊论文项目
纳米加工与新型半导体器件研究
期刊论文 101 会议论文 13 获奖 2 专利 121
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