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电荷俘获存储器中俘获层的研究进展
  • 期刊名称：微纳电子技术
  • 时间：0
  • 页码：-
  • 分类：TP333.5[自动化与计算机技术—计算机系统结构;自动化与计算机技术—计算机科学与技术]
  • 作者机构：[1]中国科学院微电子研究所,纳米加工与新器件集成技术实验室,北京100029, [2]安徽大学电子科学与技术学院,合肥230039
  • 相关基金：基金项目：国家重点基础研究发展计划（973计划）资助项目（2006CB302706,2006CB806204,2007CB935302）;国家自然科学基金资助项目（60825403,60676008,60676001）;国家高技术研究发展计划（863计划）资助项目（2008AA031403,2009AA032306）;国家科技重大专项资助项目（2009ZX02023-5,2009ZX02302-04）;中国科学院重大科研装备研制项目（YZ200840）
  • 相关项目：纳米加工与新型半导体器件研究
作者： 李德君|陈军宁|代月花|刘明|龙世兵|王琴|张满红|刘璟|杨仕谦|王永|杨潇楠|
关键词： 高K材料, 非挥发性存储器(NVM), 电荷俘获存储器, 俘获层, 隧穿层, high-k material, nonvolatile memory （NVM） , charge trapping memory, trapping layer tunneling layer
中文摘要：

随着45nm和32nm技术节点的来临，传统Si3N4作为电荷俘获存储器的俘获层已经使器件的性能受到了限制。指出采用高k材料代替Si3N4作为俘获层已成为目前微电子材料研究的热点和趋势；着重对电荷俘获存储器的俘获层，包括对Si3N4掺O的无定形氧氮化硅（α-SiOxNy）俘获层、高k介质材料俘获层、植入纳米晶材料的俘获层及其叠层结构的研究现状和存在的问题进行了综述和分析，并对其进一步的研究趋势进行了展望。

英文摘要：

With the coming of 45 nm and 32 nm technology node, the performance of the devices with the conventional Si3N4 charge trapping layer is limited. The substitution of high-k materials for Si3N4 as charge trapping layer has become the research topic and tendency in the area of microelectronics at present. Research status and present problem of the charge trapping layer in the charge trapping memory are summarized and analyzed, including Si3N4 dopped O （a-SiOxNy）, high-k materials, embedded nanocrystal materials and multistacked structure. And the further research tendency is prospected.

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