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中文摘要：
为了研究复杂波形脉冲对集成电路的损伤效应，用改变ESD模拟器放电参数产生的不同的静电放电脉冲对某集成电路芯片进行了注入损伤效应实验。给出了各主要的损伤参数与放电电压的散点图。并借助曲线拟合的方法进行了分析。结果表明：IC芯片注入通路上的电阻在脉冲波形发生变化时变化不大。电流随放电电压增大；芯片上的峰值功率及峰值能量与放电电压满足P（W）=AUD^B。最后，比较了各脉冲注入下器件的主要参数损伤阈值，得到结论：ESD模拟器放电参数改变对器件损伤阈值大小的影响在1～2倍间。相同参数在不同注入脉冲下的阈值处于同数量级。
英文摘要：
In order to study the EMP damage effects of integrated circuits exposed to EMP pulses with complex wave shape, several resistance and capacitance discharge networks were adopted in an ESD simulator to generate different ESD pulses. An IC type device was injected by these pulses. The scattering dots curves between the discharge voltage and the damage parameters such as the peak current, peak power and the peak energy of the device were obtained. Curve fitting method was then used to analyze these scattering dots curves. Results show that the change of the waveform of ESD pulse has little influence on the resistance of the passing way and the pin current increases with increase of the discharge voltage. The relationship between the peak energy absorbed by the IC chip with the peak power on the IC chip and the discharge voltage meet the function of y=ax^b. The thresholds for main parameters of the device stressed with those ESD pulses were compared. The conclusion can be drawn that the same type failure thresholds of this integrated circuit are the same of magnitude and vary by less than a factor of two. It is also shown that the various pulses generated from many ESD events have a limited influence on the failure thresholds of IC. Accordingly, the prediction of ESD failure thresholds of IC type device may be achieved in an error rounds.
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