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中文摘要：
为了考察不同波形脉冲对集成电路损伤效应的异同性,用ESD和方波脉冲对2种集成电路器件进行注入损伤效应实验,在采用曲线拟合分析法建立起波形参数与器件损伤参数间的数学模型后,讨论了不同脉冲注入时器件的损伤阈值和损伤机理.结果表明：2种注入方式对实验器件的损伤机理相同或类似;以损伤能量作比较,同一器件的ESD损伤阈值小于方波阈值;同属一个门类的这2种器件,方波阈值相差小而ESD阈值相差大且方波实验下所得器件敏感度排序与ESD脉冲注入时排序相同.2种注入方式下建立起的数学模型的表述形式虽有可能不同,但器件的损伤参数与脉冲参数间关系变化的实质规律不变.方波时可将所有参数都考虑进来拟合得到一个联合式,但ESD脉冲注入时这种拟合的准确度会降低,可能因实验脉冲参数变化的范围不大而引起.
英文摘要：
The similarities and differences of damage effects of integrated circuits were studied by the test that two chips were injected by ESD and rectangular pulse respectively. The curve fitting method was used to analyze the relationships between the pulse parameters and the device failure parameters. The failure thresholds of the devices and the failure mechanisms were also compared and discussed. Results show the failure mechanisms of the devices injected by two pulses are similar. When the energy is sufficient to damage the devices, the ESD thresholds are always smaller than that under rectangular pulse. For the two devices coming from the same family, the difference of their square wave failure thresholds was less than that of ESD and the susceptibility order obtained through square wave test may be applied to the ESD condition. It is concluded that although the expressions of the models between the device failure parameters and the pulses parameters may be different, the inherent rules of the relationships are uniform. A united formula including all primary parameters can be obtained under rectangular pulse while the fitting accuracy drops in ESD pulse and this may be caused by the small differences existing in some parameters of the test ESD pulses.
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