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中文摘要：
为了得到电磁脉冲注入对硅半导体器件的作用效应,对两个批次的同型号微波低噪声硅晶体管进行方波注入试验,得出了此类器件对电磁脉冲的最灵敏端对CB结和最敏感参数VBRCEO、损伤电压值、损伤电流值及损伤功率值.电磁脉冲注入时,通过示波器记录晶体管上的瞬时电压、电流波形并得出器件瞬时功率波形.将器件损伤时出现的二次击穿点的功率平均值作为该器件的损伤功率值,将二次击穿点的延迟时间与对应的损伤功率值作P-T图,得出其拟合曲线方程.根据拟合方程把各延迟时间下的损伤功率换算为1μs脉宽下的功率值,统计其损伤能量基本符合正态分布.经分析,器件方波电磁脉冲注入时的损伤机理为热二次击穿.
英文摘要：
In order to find effects of electromagnetic pulses injection on micro-wave low-noise silicon semiconductors, square-wave EMP was injected into two batches of those homotypic microwave low-noise silicon transistors in these tests. By comparing damage voltages of all injected combinations especially EB knot＇s and CB knot＇s, the most sensi- tive port was found to be CB knot, and through the changes of all electronic parameters the most susceptive parameter was reverse breakdown voltage of CE VBRCEO. As the time when the threshold voltages were gotten, the damage powers of these transistors were recorded particularly. Through the Agilent inifniium oscillograph, the instantaneous voltage and current waveforms were recorded and calculated to gain instantaneous power waveforms while EMP was injected. The power value of second breakdown points were taken as damage powers of these transistors. P-T pictures were made in computer with delay times and the relevant damage powers. By curve fitting, the P-T relation equation was made. According to the equation, the recorded damage power values could be conversed to the powers which were relevant to 1μs delay time. From the histogram it could be found that the damage energy values of those micro-wave low-noise transistors were accorded with normal distribution. Analyses show the EB knot was soft breakdown, the CB knot was hard breakdown, and the current distribution of EB knot was well-proportioned, and its CB knot was focused on margins and corners. So CB knot was easier to breakdown than EB knot. The damage mechanism of square-wave EMP injection was heat second breakdown.
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