针对硅微波低噪声三极管2SC3402进行方波电磁脉冲效应实验,主要研究三极管在方波电磁脉冲作用下哪些部位对电磁脉冲最为敏感,哪些电参数最容易发生变化。实验采用方波电磁脉冲发生器对三极管进行方波电磁脉冲注入。观察三极管电参数的变化。实验结果表明,三极管对电磁脉冲最敏感的部位是集电结,最灵敏参数是CE反向击穿电压VBRCEO。
Silicon micro-wave low-noise triode, such as 2SC3402 has carried on experiments of the square wave electromagnetic pulse effect and get some initial conclusions. The experiment follows that the triode's most sensitive position of square wave electromagnetic pulse is the collector junction. The most sensitive parameters are the reverse breakdown voltage VBRCEo between collector and emitter.