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中文摘要：
化学 mechanicalpolishing/planarization (CMP ) 的接触压力和流动特征处理被分析，利用二层的一个维的接触模型并且考虑泥浆流动。在这个模型，体积垫底层和粗糙的变丑被考虑。体积垫底层和粗糙层的变丑，以及接触压力和液体迫使，与数字方法被揭示。数字模拟结果显示出违反直觉的现象：一个分叉的清理在晶片的领先的区域被形成，从而，它产生一个吸压力(subambi-ent 压力) 。高压力集中在晶片边被介绍并且能从而在擦亮上被介绍。研究为平常的 CMP 过程的这二个基本特征提供一些理论解释。
英文摘要：
Contact pressure and flow features of chemical mechanical polishing/planarization （CMP） process were analyzed, taking advantage of the one-dimensional contact model of two layers and considering slurry flows. In this model, deformations of the bulk pad substrate and the asperities were considered. The deformations of the bulk pad substrate and the asperity layer, as well as the contact pressure and fluid pressure, were revealed with numerical methods. Numerical simulation results show a counterintuitive phenomenon： a diverging clearance is formed in the leading region of the wafer and thereby it gives rise to a suction pressure （subambient pressure）. A high stress concentration is presented at the wafer edge and thereby over polishing can be introduced. The research provides some theoretical explanations for these two fundamental features of usual CMP processes.
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