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Eliminating Back-Gate Bias Effects in a Novel SOI High-Voltage Device Structure
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：0
  • 页码：1659-1666
  • 语言：英文
  • 相关项目：SOI高压器件荷致高场理论与新结构
作者： Fu, Daping|Zhang, Zhengyuan|Feng, Zhicheng|Zhang, Bo|Lei, Lei|Hu, Shengdong|Yan, Bin|Luo, Xiaorong|Li, Zhaoji|
同期刊论文项目
SOI高压器件荷致高场理论与新结构
期刊论文 34 会议论文 6 专利 7
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