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A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer
  • ISSN号：1674-1056
  • 期刊名称：Chinese Physics B
  • 时间：0
  • 页码：077306-1-077306-7
  • 语言：英文
  • 相关项目：SOI高压器件荷致高场理论与新结构
作者： Luo Xiao-Rong|Wang Yuan-Gang|Deng Hao|Udrea, Florin|
同期刊论文项目
SOI高压器件荷致高场理论与新结构
期刊论文 34 会议论文 6 专利 7
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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406