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Field Enhancement for Dielectric Layer of High-Voltage Devices on Silicon on Insulator
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：0
  • 页码：2327-2334
  • 语言：英文
  • 相关项目：SOI高压器件荷致高场理论与新结构
作者： Hu, Shengdong|Zhang, Bo|Luo, Xiaorong|Li, Zhaoji|
同期刊论文项目
SOI高压器件荷致高场理论与新结构
期刊论文 34 会议论文 6 专利 7
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