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Numerical and Experimental Investigation on a Novel High-Voltage (> 600-V) SOI LDMOS in a Self-Is
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：0
  • 页码：3033-3043
  • 语言：英文
  • 相关项目：SOI高压器件荷致高场理论与新结构
作者： Li, Zhaoji|Luo, Xiaorong|Zhang, Bo|Udrea, Florin|Hsu, Wesley Chih-Wei|Lei, Tianfei|Xiao, Zhiqiang|
同期刊论文项目
SOI高压器件荷致高场理论与新结构
期刊论文 34 会议论文 6 专利 7
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