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A new double gate SOI LDMOS with a step doping profile in the drift region
  • ISSN号：1674-4926
  • 期刊名称：Journal of Semiconductors
  • 时间：0
  • 页码：084006-1-084006-6
  • 语言：英文
  • 分类：TN432[电子电信—微电子学与固体电子学] G811.21[文化科学—体育学]
  • 作者机构：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China, [2]State Key Laboratory of ASIC & System, Fudan University, Shanghai 200433, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （No. 60806025） and the NKLAIC （Nos. 9140C0903070904, jx0721）.
  • 相关项目：SOI高压器件荷致高场理论与新结构
作者： Gu, Jingjing|Zhang, Bo|Luo, Xiaorong|Liao, Hong|Zhang, Wei|Li, Zhaoji|
关键词： LDMOS, 兴奋剂, 绝缘硅, 漂移区, 配置, 双门, 电场分布, BV公司, SOI, embedded gate, electric field, breakdown voltage, specific on-resistance
中文摘要：

Corresponding author. Email： xrluo@uestc.edu.cn

同期刊论文项目
SOI高压器件荷致高场理论与新结构
期刊论文 34 会议论文 6 专利 7
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期刊信息
  • 《半导体学报：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编：李树深
  • 地址：北京912信箱
  • 邮编：100083
  • 邮箱：cjs@semi.ac.cn
  • 电话：010-82304277
  • 国际标准刊号：ISSN：1674-4926
  • 国内统一刊号：ISSN：11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
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  • 被引量:7754