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Design of compound buried layer SOI high voltage device with double windows
  • ISSN号：0013-5194
  • 期刊名称：Electronics Letters
  • 时间：0
  • 页码：82-83
  • 语言：英文
  • 相关项目：SOI高压器件荷致高场理论与新结构
作者： Zhang, B.|Hu, S. D.|Luo, X. R.|Li, Z. J.|
同期刊论文项目
SOI高压器件荷致高场理论与新结构
期刊论文 34 会议论文 6 专利 7
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