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A novel complementary N~+-charge island SOI high voltage device
  • 期刊名称：半导体学报
  • 时间：0
  • 页码：47-51
  • 语言：中文
  • 相关项目：SOI高压器件荷致高场理论与新结构
作者： 胡盛东|吴丽娟|李肇基|张波|
同期刊论文项目
SOI高压器件荷致高场理论与新结构
期刊论文 34 会议论文 6 专利 7
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