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Low on-resistance SOI dual-trench-gate MOSFET
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：0
  • 页码：504-509
  • 语言：英文
  • 相关项目：SOI高压器件荷致高场理论与新结构
作者： Wang, Q.|Jiang, Y.H.|Zhang, Bo|Wang, P.|Ge, R.|Li, Zhaoji|Zhou, K.|Luo, Xiaorong|Yao, G.L.|Zhang, Z.Y.|Fan, Jie|Lei, T.F.|Udrea, Florin|Wang, Y.G.|
同期刊论文项目
SOI高压器件荷致高场理论与新结构
期刊论文 34 会议论文 6 专利 7
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