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Novel Low-k Dielectric Buried-Layer High-Voltage LDMOS on Partial SOI
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：0
  • 页码：535-538
  • 语言：英文
  • 相关项目：SOI高压器件荷致高场理论与新结构
作者： Luo, Xiaorong|Fan, Jie|Wang, Yuangang|Deng, Hao|Lei, Tianfei|Liu, Yong|
同期刊论文项目
SOI高压器件荷致高场理论与新结构
期刊论文 34 会议论文 6 专利 7
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