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A new SOI high voltage device based on E-SIMOX substrate
  • 期刊名称：半导体学报
  • 时间：0
  • 页码：044008-1-044008-6
  • 语言：中文
  • 分类：TN304[电子电信—物理电子学] TN303[电子电信—物理电子学]
  • 作者机构：[1]State Key Laboratory of Electronic Thin Films and lntegrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China, [2]Communication Engineering, Chengdu University of Information Technology, Chengdu 610225, China
  • 相关基金：Project supported by the Major Project of the National Natural Science Foundation of China （No. 60806025） and the Youth Teacher Foundation of University of Electronic Science and Technology of China （No. jx0721）.
  • 相关项目：SOI高压器件荷致高场理论与新结构
作者： Wu Lijuan|Hu Shengdong|Zhang Bo|Li Zhaoji|
关键词： SIMOX材料, 高压器件, SOI, 基板, 横向电场, CMOS工艺, 垂直界面, 二维模拟, E-SIMOX, charge islands, breakdown voltage, interface charges, ENDIF
中文摘要：

Corresponding author. Email： ljwu@cuit.edu.cn

同期刊论文项目
SOI高压器件荷致高场理论与新结构
期刊论文 34 会议论文 6 专利 7
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