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退火温度对掺氮ZnO薄膜结构和光电特性的影响
  • ISSN号：0253-4177
  • 期刊名称：半导体学报
  • 时间：0
  • 页码：2120-2123
  • 语言：中文
  • 分类：TN304.25[电子电信—物理电子学]
  • 作者机构：[1]中国科学技术大学物理系,合肥230026
  • 相关基金：国家自然科学基金资助项目（批准号：50532070）
  • 相关项目：氧化锌异质结构电致发光及缺陷和杂质的行为研究
作者： 孙利杰|林碧霞|傅竹西|钟声|徐小秋|
关键词： 热氧化, ZnO, XPS, 受主能级, thermal oxidation, ZnO, XPS, acceptor binding energy
中文摘要：

采用Zn3N2热氧化法在直流磁控溅射设备上制备了掺氮ZnO薄膜（ZnO：N）,研究了不同退火温度对样品结构和光电特性的影响.X射线衍射谱（XRD）结果表明,Zn3N2在600℃以上退火即可转变为ZnO：N薄膜.X射线光电子能谱（XPS）发现,在热氧化法制备的ZnO：N薄膜中,存在两种与N相关的结构,分别是N原子替代O（受主）和N2分子替代O（施主）,这两种结构分别于不同的退火温度下存在,并且700℃下退火的样品在理论上具有最高的空穴浓度,这一点也由霍尔测量结果得到证实.同时,从低温PL光谱中观察到了与No受主有关的导带到受主（FA）和施主-受主对（DAP）的跃迁,并由此计算出热氧化法制备的ZnO：N薄膜中的No受主能级位置.

英文摘要：

Nitrogen-doped ZnO （ZnO：N） films are prepared by thermal oxidation of sputtered Zn3N2 layers on Al2O3 substrate. The dependence of the structural and optical properties of the ZnO：N films on annealing temperature is investigated. X-ray Diffraction （XRD） results illustrate that the as-sputtered Zn3N2 films can be transformed into ZnO：N films after annealing at 600℃ and above. X-ray photoelectron spectroscopy （XPS） reveals that nitrogen has two chemical states in the ZnO：N films： （N2）o and No,which denote substitution of molecular N for O and atomic N for O,respectively. Hall effect measurements illustrate that the hole concentration in ZnO：N films annealed at 700℃ is the highest. The FA and DAP transition peaks are observed in low temperature photoluminescence spectra,from which the nitrogen acceptor binding energy can be obtained.

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氧化锌异质结构电致发光及缺陷和杂质的行为研究
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