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Au/n-ZnO/p-Si结构的紫外增强型光电三极管的研制(英文)
  • ISSN号：0253-4177
  • 期刊名称：半导体学报
  • 时间：0
  • 页码：687-690
  • 语言：中文
  • 相关项目：氧化锌异质结构电致发光及缺陷和杂质的行为研究
作者： 傅竹西|郭俊福|林碧霞|段理|何广宏|谢家纯|
同期刊论文项目
氧化锌异质结构电致发光及缺陷和杂质的行为研究
期刊论文 101 专利 2
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PLD 生长的 ZnO 薄膜的微结构及其发光特性研究
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ZnO /P-Si 接触及其温度特性
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C面蓝宝石衬底上6H-SiC薄膜的低压化学气相外延生长与表征
Ultraviolet luminescence depending on Zn interstitial in ZnO polycrystalline films
Effect of Al doping on properties of SiC films
Study on the photovoltaic conversion of ZnO/Si heterojunction
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Hydrogen diffusion behavior in N doped ZnO: First-principles study
6H-SiC 单晶表面 ZnO 薄膜的制备及其结构表征
Electrical and deep levels characteristics of ZnO/Si heterostructure by MOCVD deposition
ZnO/Si异质结的光电转换特性研究
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Effects of S incorporation on Ag substitutional acceptors in ZnO:(Ag, S) thin films
Effects of Grain Boundary Barrier in ZnO/Si Heterostructure
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SiC 缓冲层对 Si 表面生长的 ZnO 薄膜结构和光电性能的改善
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退火温度对6H-SiC衬底上ZnO薄膜发光性质的影响
Influence of CH3COO- on the room temperature photoluminescence of ZnO films perpared by CVD
Plasma pretreatment on Si(111) substrates for the growth of ZnO thin films
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ZnO(000-1) 表面的同步辐射角分辨光电子能谱研究
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ZnO/Si （ 111 ）界面结构的同步辐射掠入射 x 射线衍射研究
Photoemission studies of initial oxidation for ultra-thin zinc film on 6H-SiC(0001) surface with syn
Sb掺杂ZnO薄膜的缺陷和光学性质研究
SiC缓冲层对Si表面生长的ZnO薄膜结构和光电性能的改善
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氮气氛中高温退火对ZnO薄膜发光性质的影响
PLD生长的ZnO薄膜的微结构及其发光特性研究
退火处理对ZnO／Si异质结光电转换特性的影响
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退火温度对Zno／Si异质结光电转换特性的影响
Grain boundary layer behavior in ZnO/Si heterostructure
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ZnO薄膜微结构变化对光电特性的影响
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Electrical and deep levels characteristics of ZnO/ Si heterostructure by MOCVD deposition