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中文摘要：
在不同的衬底温度下，用脉冲激光沉积（PLD）方法制备了C轴高度取向的ZnO薄膜．采用同步辐射掠入射X射线衍射（GID）技术研究了ZnO薄膜与Si（111）衬底的界面结构．GID结果表明：不管衬底温度是500℃还是300℃，在无氧气氛下用PLD方法制备的ZnO外延膜均处于压应力状态，且随着X射线探测深度的增加，应力增大．结合常规X射线衍射技术，计算了薄膜内的双轴应力；给出了样品的泊松比和c／a值，得出两样品均接近理想的六方密堆积结构，偏离标准的ZnO值．综合各方面实验结果，说明衬底温度控制在500℃时生长的ZnO薄膜具有较好的晶体质量．
英文摘要：
High-quality c-axis oriented ZnO thin films are grown on Si（111） substrates at different substrate temperatures by pulsed laser deposition. Synchrotron radiation X-ray grazing incident diffraction （GID） is employed to study the interface structure of ZnO/Si（111）. GID results indicate that there is a compressive stress in all ZnO epitaxial films grown at substrate temperatures of 500 or 300℃ by PLD. With the increase of X-ray detection depth, the compressive stress increases. Combined with conventional XRD technology, the biaxial stress, Possion＇s ratio, and c/a of the ZnO films are calculated. The two sam- ples have a six-sided closed packing structure,deviating from the value of the standard ZnO. This indicates that the sample grown at 500~C has better crystal quality.
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