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中文摘要：
利用同步辐射光电子能谱（Synchrotron radiation photoelectron spectroscopy, SRPES）和X射线光电子能谱（X-ray photoelectron spectroscopy, XPS） 技术，研究了金属Zn在6H-SiC表面的吸附和热氧化以及ZnO／SiC的界面形成过程。研究结果表明，在SiC表面沉积金属Zn的初始阶段，Zn可以夺取SiC衬底表面残留的氧并与之成键。随着Zn覆盖度的增加，表面具有金属特性。在2．0×10^-4Pa的氧气氛中180 ℃温度退火下，覆盖的Zn会被部分氧化形成ZnO，还有部分Zn因其在真空中的低蒸发温度而逸出表面。在同样的氧气氛中600℃温度退火后，覆盖的金属Zn全部被氧化而生成ZnO。在氧气氛中退火时，衬底也会轻度氧化，从而导致在ZnO／SiC界面处存在一层很薄的Si的氧化层。根据得到的光电子能谱的实验结果，计算出ZnO／SiC异质结的价带偏移为1．1eV。
英文摘要：
The adsorption and the thermal oxidation of Zn on 6H-SiC surface and the interface formation of ZnO/SiC have been investigated by using synchrotron radiation photoelectron spectroscopy （SRPES） and X-ray photoemission （XPS）. The results show that at the initial stage of Zn adsorption, Zn can capture and bond with O remaining on the SiC surface. With increasing of Zn coverage, the surface exhibits metallic characterization. When the deposited Zn film is annealed at 180℃ in oxygen flux with the pressure of 2.0×10^-4pa, it could be partly oxidized to form ZnO. Part of Zn atoms could escape from the surface due to its low evaporation temperature in UHV condition. While annealed at 600℃ in same oxygen flux, the total deposited Zn atoms could be oxidized to form ZnO During annealing process, the substrate is also oxidized, which induces a thin layer of silicon oxide existing at the interface of ZnO/SiC. By using the results of SRPES and XPS, the valence band offset of ZnO/SiC is calculated to be 1.1 eV.
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