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中文摘要：
在不同的衬底温度下，通过脉冲激光淀积（PLD）方法在Si衬底上生长出c轴高度取向的ZnO薄膜。ZnO薄膜的结构分别通过X射线衍射（XRD）和广延X射线吸收精细结构（EXAFS）来表征，而表面成份和化学态则通过X射线光电子能谱来研究。利用光致发光（PL）来研究样品的发光特性。XRD结果和EXAFS结果都表明了500℃时生长的ZnO薄膜的结晶性比300℃时生长的要好。EXAFS结果和XPS结果显示，300℃时生长的ZnO薄膜处于富氧状态，而500℃时生长的则处于缺氧状态。结合XRD谱、EXAFS谱、XPS谱和PL谱的结果可以看到：随着ZnO薄膜的结晶性变好，它的紫外发光增强；另一方面，随着ZnO薄膜中O的含量减少，绿光发射变强。我们的结果表明绿光发射与ZnO中氧空位（V0）有关。
英文摘要：
Highly c-axis orientated ZnO films were grown on silicon substrate by pulsed laser deposition（PLD）. The fdms were characterized with X-ray diffraction（XRD）, extended X-my absorption fine structure（ EXAFS）, X-ray photoelectron spectroscopy（XPS） and photolumi- nescence（PL）. The results show that substrate temperature strongly affects oxygen content of the ZnO film.For example,the ZnO film grown at 2100℃ is oxygen rich whereas at 500℃ the better-crystallized film is oxygen deficient. We found that as crystallinity improves, ultraviolet emission intensity increases. Moreover, as oxygen content decreases, green light emission intensity becomes increasingly stronger possiby because of an increase of oxygen vacancy.
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