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中文摘要：
以二乙基锌和水汽分别作为锌源和氧源,用LP-MOCVD方法在p型Si（100）衬底上生长了单一取向的ZnO薄膜。对得到的样品在氮气气氛中进行高温热处理,退火温度分别为900,1000,1100℃。利用室温PL谱、XRD、AFM、XPS等方法对样品的性质进行了研究。研究表明：（1）随着退火温度的升高,样品的结晶性质也逐渐提高,从表面形貌观察到晶粒尺寸逐渐增大;（2）当退火温度从900℃升高至1000℃时,样品的光致发光谱中可见光波段的发光强度有所减弱,而紫外波段的发光强度明显增强;当退火温度升高至1100℃时,可见光波段的发光几乎完全被抑制,而紫外波段的发光强度急剧增强。分析认为,高温退火改善晶体结晶质量的同时调制了样品的Zn/O比,氮气气氛下的热处理使得样品内的氧原子逸出,来自受主缺陷OZn的可见发射随温度升高逐渐减弱,而当退火温度达到1000℃以上时样品成为富锌状态,此时与施主缺陷Zni有关的紫外发射急剧增强。
英文摘要：
ZnO film was deposited on p-type Si（100） substrate by an LP-MOCVD system using DEZ and H2O as zinc and oxygen sources,respectively.The film was cut into pieces and annealed in nitrogen at 900,1 000,1 100 ℃,respectively.The XRD,AFM,XPS,I-V and PL properties were investigated.The results indicated that：（1） The crystalline quality of the samples are improved by the raising of annealing temperature,the size of crystal grains is increased;（2） When the annealing temperature increases from 900 ℃ to 1 000 ℃,intensity of the UV emission of the samples is enhanced while the emission in visible region declined;When the annealing temperature raises up to 1 100 ℃,the visible emission was suppressed completely and the UV emission is enhanced greatly.These results suggested that annealing at high temperature does not only improve the crystal quality of ZnO films but also controls the Zn/O composition ratio of the samples.A high temperature and nitride environment makes the O atoms escape from the films,the concentration of OZn acceptors decreases,so that the visible emission decline.When the annealing temperature gets higher than 1 000 ℃,the samples are in the Zn-rich state.The UV emission related to the Zni donors is enhanced obviously.
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