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Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory applic
  • ISSN号：2158-3226
  • 期刊名称：AIP Advances
  • 时间：2013
  • 页码：-
  • 相关项目：铁电薄膜及其存储器中界面与应变效应的研究
作者： Z. H. Tang|Y. Xiong|M. H. Tang|Y. G. Xiao|C. P. Cheng|J. Zeng|D. L. Xu|Y. C. Zhou|
同期刊论文项目
铁电薄膜及其存储器中界面与应变效应的研究
期刊论文 127 会议论文 1
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