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Investigation of unique total ionizing dose effects in 0.2 mm partially-depleted silicon-on-insulato
  • 期刊名称：Nuclear Instruments and Methods in Physics Researc
  • 时间：2014
  • 页码：128-132
  • 相关项目：铁电薄膜及其存储器中界面与应变效应的研究
作者： Y. W. Zhang|H. X. Huang|D. W. Bi|M.H. Tang|Z.X. Zhang|
同期刊论文项目
铁电薄膜及其存储器中界面与应变效应的研究
期刊论文 127 会议论文 1
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