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Effect of oxygen vacancy concentration on domain switching of Bi<sub>3.15</sub>Nd<sub
  • ISSN号：0295-5075
  • 期刊名称：EPL
  • 时间：2011.5
  • 页码：1-4
  • 相关项目：铁电薄膜及其存储器中界面与应变效应的研究
作者： H.Huang|X. L.Zhong|S. H.Xie|Y.Zhang|J. B.Wang|Y. C.Zhou|
同期刊论文项目
铁电薄膜及其存储器中界面与应变效应的研究
期刊论文 127 会议论文 1
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