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Effects of drain-wall in mitigating N-hit single event transient via 45 nm CMOS process
  • 期刊名称：Semicond. Sci. Technol
  • 时间：2015
  • 页码：-
  • 相关项目：铁电薄膜及其存储器中界面与应变效应的研究
作者： X. Y. Xu|Y. Xiong|M. H. Tang|Y. G. Xiao|S. A. Yan|W. L. Zhang|W. Zhao|H. X. Guo|Z. Li|
同期刊论文项目
铁电薄膜及其存储器中界面与应变效应的研究
期刊论文 127 会议论文 1
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