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中文摘要：
为提高铁电薄膜的电性能,建立了一个相场理论模型,系统研究了斜切基底对铁电薄膜电畴结构及电学性能的调控机理。利用该模型,分别研究了PbTiO_3在平面基底和倾角为2°,4°,6° SrTiO_3斜切基底上的电学性能。模拟结果表明：生长在斜切基底上的铁电薄膜中的应力分布、电畴结构及畴翻转不同于生长于平面基底上的铁电薄膜。在斜切基底的束缚作用下,铁电薄膜内靠近斜切台阶处产生了应力集中,产生的非均匀应变是改变铁电薄膜性质的主要因素。在台阶高度固定的情况下,PbTiO_3铁电薄膜矫顽场随斜切基底的倾角增大而变大,极化稳定性增强。
英文摘要：
To improve the electric properties of ferroeletric film, a phase field model is estab- lished to systematically study the tuning mechanism of 2°, 4°, 6° miscut substrate on the domain structures and domain switching of ferroelectric films. The electric properties of PbTiO3 grown on exact and 2°, 4°, 6°miscut SrTiO3 substrates are investigated by using this model. The simulation results demonstrate that stress distribution, domain structures and domain switching in ferroelectric films grown on miscut substrates are different from those in ferroelectric films grown on exact substrates. Under the constrain of miscut substrate, stress concentration which is responsible for the change of electric properties of ferroelectric films is found at the step corner of the miscut substrate. It is also shown that when the step height is fixed, the polarization stability of ferroelectric thin films is strengthened with the increase of the inclination angle of the miscut substrates.
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