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A Si tunnel field-effect transistor model with a high switching current ratio and steep subthreshold
  • 期刊名称：Semicond. Sci. Technol
  • 时间：2014
  • 页码：-
  • 相关项目：铁电薄膜及其存储器中界面与应变效应的研究
作者： X. D. Wang|Y. Xiong|M. H. Tang|L. Peng|Y. G. Xiao|X. Y. Xu|S. E. Liang|X. H. Zhong|J. H. He|
同期刊论文项目
铁电薄膜及其存储器中界面与应变效应的研究
期刊论文 127 会议论文 1
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