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A Retention Model for Ferroelectric-Gate Field-Effect Transistor
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：2011.10
  • 页码：3388-3394
  • 相关项目：铁电薄膜及其存储器中界面与应变效应的研究
作者： Huang, Shuai|Zhong, Xiangli|Zhang, Yi|Tan, Qiuhong|Wang, Jinbin|Zhou, Yichun|
同期刊论文项目
铁电薄膜及其存储器中界面与应变效应的研究
期刊论文 127 会议论文 1
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