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Magnetoelectric Bi<sub>3.25</sub>Nd<sub>0.75</sub>Ti<sub>3</sub>
  • 期刊名称：Science and Technology
  • 时间：2013
  • 页码：136-140
  • 相关项目：铁电薄膜及其存储器中界面与应变效应的研究
作者： C.P. Cheng, Z.H. Tang,|M.H. Tang, Y.C. Zhou,|
同期刊论文项目
铁电薄膜及其存储器中界面与应变效应的研究
期刊论文 127 会议论文 1
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