位置：成果数据库 > 期刊 > 期刊详情页
应变对四方相 BaTiO3 缺陷及极化的影响
  • ISSN号：1000-324X
  • 期刊名称：无机材料学报
  • 时间：2012
  • 页码：-
  • 相关项目：铁电薄膜及其存储器中界面与应变效应的研究
作者： 张思|马颖|周益春|
同期刊论文项目
铁电薄膜及其存储器中界面与应变效应的研究
期刊论文 127 会议论文 1
同项目期刊论文
A multi-field coupling theoretical framework considering flexoelectric effect and finite element imp
Simulation of multi level polarization in ferroelectric tunnel junctions
Magnetoelectric Bi<sub>3.25</sub>Nd<sub>0.75</sub>Ti<sub>3</sub>
Retention loss in the ferroelectric (SrBi<sub>2</sub>Ta<sub>2</sub>O<sub&
Effect of surface tension on electrocaloric effects in the ferroelectric nanomaterial with vortex do
Double perovskite magnetic La2NiMnO6 nanoparticles for adsorption of bovine serum albumin applicatio
Sizable electrocaloric effect in a wide temperature range tuned by tensile misfit strain in&nbsp
Electrical properties of La<sub>0.6</sub>Ca<sub>0.4</sub>MnO<sub>3<
Resistive switching properties of sol-gel derived V-doped SrTiO<sub>3</sub> thin films
REDUCED LEAKAGE CURRENT AND ENHANCED MAGNETIC PROPERTIES OF (Bi,Nd)FeO3 THIN FILMS GROWN ON (Ba,Sr)T
Large memory window and good retention characteristics of ferroelectric-gate field-effect transistor
&nbsp;Magnetoelectric coupling in La<sub>0.6</sub>Ca<sub>0.4</sub>MnO<
Domain wall contribution to the electrocaloric effect in BaTiO<sub>3</sub> nanoparticle:
Photo-to -current response of Bi<sub>2</sub>Fe<sub>4</sub>O<sub>9</
Giant electrocaloric effects in ferroelectric nanostructures with vortex domain structures
A Retention Model for Ferroelectric-Gate Field-Effect Transistor
Diffuse phase transition and leakage current characteristics of (Pb<sub>0.25</sub>Sr<
Improvement of Resistive Switching Characteristics in SolutionSynthesized Al, Cr, and Cu-Doped TiO2
Enhancing the electrocaloric effect of&nbsp;PbZr<sub>0.4</sub>Ti<sub>0.6</s
Determination of crystal symmetry for Bi4Ti3O12-based ferroelectrics by using electron diffraction
&nbsp;Ferroelectric and ferromagnetic properties of SrTi<sub>0.9</sub>Fe<sub>0
Preparation of Magnetic Ni<sub>0.5</sub>Co<sub>0.5</sub>Fe<sub>2</s
Strain effects on oxygen vacancies and their migration in BaTiO3: A first-principles study
Effects of space charge distribution on ferroelectric hysteresis loops considering the inhomogeneous
A Si tunnel field-effect transistor model with a high switching current ratio and steep subthreshold
Improved energy storage&nbsp; properties of PbZrO<sub>3&nbsp;</sub>thin films by
&nbsp;Simulation of multi-level polarization in ferroelectric tunnel junctions
Effect of <span class="journalhead">Mn-doping</span> on the structural, dielec
Temperature dependence of polarization switching properties of&nbsp;Bi<sub>3.15</sub>
Size effect on the ultrathin ferroelectric film directly grown on silicon for electronic devices
Carbon nanotube nonvolatile thin-film transistors with (Bi,Nd)<sub>4</sub>Ti<sub>3
Epitaxial growth and dielectric properties of BSZT thin films on SrTiO<sub>3</sub>:Nb si
Influence of vortex domain switching on the electrocaloric property of a ferroelectric nanoparticle
Influence of sputtering atmosphere on the structural and magnetic properties of (Bi<sub>1-x<
The influence of field-dependent carrier mobility and permittivity on space-charge-limited leakage c
Effects of drain-wall in mitigating N-hit single event transient via 45 nm CMOS process
Influence of substrates on resistive switching behaviors of V-doped SrTiO<sub>3 </sub>th
Investigation of unique total ionizing dose effects in 0.2 mm partially-depleted silicon-on-insulato
铁电薄膜漏电流的应变调控
First principles study of polarization-strain coupling in SrBi<sub>2</sub>Ta<sub>2
Growth of highly near-c-axis oriented ferroelectric LiNbO3 thin films on Si with a ZnO buffer layer
Tunable oxygen vacancy configuration by strain engineering in perovskite ferroelectrics from first-p
Effect of oxygen vacancy concentration on domain switching of Bi<sub>3.15</sub>Nd<sub
Magnetic properties of NiFe2O4 thin films grown on La0.7Sr0.3MnO3-buffered Si substrate
Multi-channel ferroelectric-gate field effect transistors with excellent performance based on ZnO na
Scaling behavior of dynamic hysteresis in relaxor ferroelectric 0.67Pb(Mg<sub>1/3</sub>N
First principle study of polarization-strain coupling in SrBi2Ta2O9
Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory applic
Growth and characterization of highly near-c-axis oriented LiNbO<sub>3</sub> thin films
Microstructure, magnetoelectric properties and leakage mechanisms ofLa<sub>0.7</sub>Ca&l
Effects of SrTiO<sub>3</sub> buffer layer on structural and electrical properties of Bi&
Piezoresponse force microscopy observation of domain switching in Bi<sub>3.15</sub>Nd<
<span>Ferroelectric field-effect transistors based on multi-walled carbon nanotube micron-wide
外延压应变对 BaTiO3 铁电体抗辐射性能影响的分子动力学研究
The magnetic phase transition in Cu-doped ZnO: From bulk to nanocluster
Neutron radiation effects in Bi 3.15Nd 0.85Ti 3O 12 ferroelectric thin film capacitors
Improvement of Electrical Conductivity and Leakage Current in Co-Precipitation Derived Nd-doping BiF
Impact of HfTaO Buffer Layer on Data Retention Characteristics of Ferroelectric-Gate FET for Nonvola
Effect of La-doping content on the dielectric and ferroelectric properties of 0.88Pb(Mg<sub>1/
Strain effects on formation and migration energies of oxygen vacancy in perovskite ferroelectrics: A
Enhanced piezoelectric response in single - crystalline Bi4Ti3O12 nanoplates
Giant electrocaloric effect of PbTiO3 thin film tuned in a wide temperature range by the anisotropic
Thermally activated polarization dynamics under the effects of lattice mismatch strain and external
Enhancement of ferroelectricity and large dielectric strength of Pb(Zr<sub>0.52</sub>Ti&
Effect of LaNiO<sub>3</sub> buffer layer on dielectric and tunable properties of Pb<s
Enhanced ferroelectric, dielectric and leakage properties in Ce and Ti co-doping BiFeO<sub>3&l
The coexistence of the negative andpositive electrocaloric effect in ferroelectric thin films for so
Structure and&nbsp; composition-dependent optical properties of (Pb<sub>x</sub>Sr<
Composition depth profiles of &nbsp;Bi<sub>3.15</sub>Nd<sub>0.85</sub>Ti
Impedance response and dielectric relaxation in co-precipitation derived ferrite (Ni,Zn)Fe<sub>
Influence of SrTiO<sub>3</sub> buffer layer on the ferroelectric properties of Bi<sub
Strong magnetoelectric coupling in sol-gel derived multiferroic (Pb<sub>0.76</sub>Ca<
Impact of total ionizing dose irradiation on Pt/SrBi2Ta2O9/HfTaO/Si memory capacitors
A ferroelectric tunnel junction based on the piezoelectric effect for non-volatile nanoferroelectric
Strain control of the leakage current of the ferroelectric thin films
<strong>Temperature dependence of magnetoelectric effect in Bi<sub>3.15</sub>Nd<
Large resistive switching in Pt/BNT/HfO<sub>2</sub>/Pt capacitors
Terahertz electro-optic properties of PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O&
Improvement of resistive switching performances via an amorphous ZrO<sub>2</sub> layer f
Controllable synthesis and formation mechanism of Bi<sub>4</sub>Ti<sub>3</sub&g
Oxygen-vacancy-related relaxation and conduction behavior in (Pb<sub>1-x</sub> Ba<sub
Room temperature ferroelectric properties and leakage current characterics of Bi<sub>2</sub
Dielectric Property of 0.45NiFe<sub>2</sub>O<sub>4 </sub>+0.55BaTiO<sub&g
Ferromagnetism and surface chemical states of Ni<sub>0.5</sub>Zn<sub>0.5</sub&g
High energy density capacitors based on 0.88BaTiO<sub>3</sub>-0.12Bi(Mg<sub>0.5<
Large femtosecond third-order optical nonlinearity of Bi<sub>3.15</sub>Nd<sub>0.85
Enhanced room temperature electrocaloric effect in barium titanate thin films with diffuse phase tra
Structural and electrical characterizations of&nbsp;Bi(Zn<sub>0.5</sub>Ti<sub>
Sol-Gel Template Synthesis and Photoluminescence Properties of (Pb0.5Sr0.5)TiO3 Nanotube Arrays
Interface effect on the magnitude and stability of ferroelectric polarization in ultrathin PbTiO3 fi
The coexistence of the negative and positive electrocaloric effect in ferroelectric thin films for s
Spontaneous polarization and its strain effects for orthorhombic and monoclinic Bi4Ti3O12: A first p
Polar ZnO thin-film nonvolatile transistors with(Bi,Nd)<sub>4</sub>Ti<sub>3</su
Novel Si ion implantation technology for improving the irradiation responses of SOI pseudo-MOS trans
Magnetoelectric Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub&
Influence of annealing temperature on the dielectric and pyroelectric&nbsp; properties of highly
<strong>Effects of annealing temperature on magnetic properties of Bi<sub>0.9</sub>
电离辐射环境下金属-铁电-绝缘体-基底结构铁电场效应晶体管电学性能的模拟
Effect of BiFeO<sub>3</sub> doping on ferroelectric properties of Na<sub>0.5</s
高场效应迁移率铁电栅二氧化锡薄膜晶体管的研究
本征晶格缺陷对BNT铁电薄膜光响应性能的影响
（Ba_（0.8）Sr_（0.2））_（1-1.5x）Bi_xTiO_3陶瓷的弥散相变和高温介电异常研究
Ba（Zr（0.06）Ti（0.94））O3-BiFeO3复合陶瓷的介电、铁电及压电性能研究
不同退火气氛下Bi2NiMnO6薄膜的铁电性能和漏电流研究
热解温度对镧、锰共掺杂铁酸铋薄膜铁电性能的影响（英文）
Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation
球磨法和溶胶-凝胶法制备PMN—PT粉体
Electronic structure and magnetic properties of （Mn, N）-codoped ZnO
期刊信息
  • 《无机材料学报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国科学院上海硅酸盐所
  • 主编：郭景坤
  • 地址：上海市定西路1295号
  • 邮编：200050
  • 邮箱：wjclxb@mail.sic.ac.cn
  • 电话：021-52411302
  • 国际标准刊号：ISSN：1000-324X
  • 国内统一刊号：ISSN：31-1363/TQ
  • 邮发代号:4-504
  • 获奖情况:
  • 获"中国百种杰出学术期刊"称号
  • 国内外数据库收录:
  • 美国化学文摘（网络版）,荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,美国科学引文索引（扩展库）,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,瑞典开放获取期刊指南,中国北大核心期刊（2000版）
  • 被引量:21274