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Impact of total ionizing dose irradiation on Pt/SrBi2Ta2O9/HfTaO/Si memory capacitors
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2015
  • 页码：-
  • 相关项目：铁电薄膜及其存储器中界面与应变效应的研究
作者： H. X. Guo|Y. Xiong|M. H. Tang|Z. Li|Y. G. Xiao|W. L. Zhang|H. Ding|J. W. Chen|Y. C. Zhou|
同期刊论文项目
铁电薄膜及其存储器中界面与应变效应的研究
期刊论文 127 会议论文 1
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