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中文摘要：
采用化学溶液法以LaNiO3为底电极在Si（100）衬底上生长了Bi2NiMnO6薄膜,分别在N2和O2下对薄膜进行退火,退火温度均为600℃,研究不同退火气氛对薄膜结构与电性能的影响.用XRD测量分析了Bi2NiMnO6薄膜的结构,用铁电性能测量仪表征了样品的铁电性能和漏电流特性.结果表明,在N2或O2气氛下,Bi2NiMnO6薄膜均能成相,所有样品在室温下均表现出铁电性能,同时,这些样品都呈现出相当低的漏电流密度.此外,还讨论了Bi2NiMnO6薄膜的导电机制.
英文摘要：
Bi2NiMnO6（abbreviated as BNMO） thin films grow on LaNiO3 buffered Si（100） substrate prepared by chemical solution deposition. The structure of the thin films is characterized by X-ray diffraction, and both the ferroelectric properties and leakage current behavior are measured by ferroeleetric tester at room temperature. The results suggest that they have become crystalline phases in the two samples annealed in N2 and O2 respectively. The ferroelectric properties appear in all samples under room temperature and the BNMO sample shows a fairly low leakage current density. Furthermore, the mechanism of electrical conductivity is also investigated in the paper.
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