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Large memory window and good retention characteristics of ferroelectric-gate field-effect transistor
  • ISSN号：0022-3727
  • 期刊名称：Journal of Physics D: Applied Physics
  • 时间：2012.1.18
  • 页码：1-5
  • 相关项目：铁电薄膜及其存储器中界面与应变效应的研究
作者： B.Jiang|M.H.Tang|J.C.Li|Y.G.Xiao|Z.H.Tang|H.Q.Cai|X.S.Lv|Y.C.Zhou|
同期刊论文项目
铁电薄膜及其存储器中界面与应变效应的研究
期刊论文 127 会议论文 1
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