中文摘要：

利用准分子脉冲激光器在Pt/Ti/SiO2/Si（111）衬底上制备了Pb（Zr0.4Ti0.6）O3（PZT）铁电薄膜.利用掩膜技术,采用磁控溅射法在PZT薄膜上生长Pt上电极,构架了Pt/PZT/Pt铁电电容器异质结.采用X射线衍射和电容耦合测试技术分别表征了PZT铁电薄膜的微结构和电学性能.研究发现：在5 V的测试电压下,在560℃较低的沉积温度下生长的PZT薄膜电容器的剩余极化强度为187 C/m2、矫顽电压为2.0 V、漏电流密度为2.5×10-5A/cm2.应用数学拟合的方法研究了Pt/PZT/Pt的漏电机理,发现当电压小于1.22 V时,Pt/PZT/Pt电容器对应欧姆导电机理;当电压大于2.30 V时,对应非线性的界面肖特基传导（Schottky emission）机理.

英文摘要：

Pb（ZrxTi1-x）O3（PZT） ferroelectric thin film was deposited on Pt/Ti/SiO2/Si（111） substrates by the pulsed laser deposition（PLD）,Pt film was sputtered as top electrode by RF-sputtering method using a shadow mask to obtain Pt/PZT/Pt ferroelectric capacitor heterostructures.The microstructural and electrical properties of PZT thin film were investigated by X-ray diffraction（XRD） and capacitive coupling technology,respectively.It was found that remnant polarization,coercive voltage and leakage current density of the Pt/PZT/Pt capacitor were 187 C/m2,2.0 V and 2.5×10-5 A/cm2,respectively.Leakage current mechanism of the Pt/PZT/Pt ferroelectric capacitor was further investigated,it is found that Pt/PZT/Pt corresponded to ohmic conduction behavior at low applied voltages（1.22 V） and nonlinear interface-limited Schottky emission at higher applied voltages（2.30 V）.