中文摘要：

采用射频磁控溅射法在室温玻璃衬底上成功地制备出了铟镓锌氧（In-Ga-Zn-O）透明导电薄膜。研究了不同溅射功率对In-Ga-Zn-O薄膜结构、电学和光学性能的影响。X射线衍射（XRD）表明,在80～150 W溅射功率范围内,In-Ga-Zn-O薄膜为非晶结构。随着溅射功率的增加,生长速率成线性增加,电阻率逐渐降低。透射光谱显示在350 nm附近出现较陡的吸收边缘,说明In-Ga-Zn-O薄膜在以上溅射功率范围内具有良好的薄膜质量。光学禁带宽度随着溅射功率增加而减小。In-Ga-Zn-O薄膜在500～800 nm可见光区平均透过率超过90%。

英文摘要：

Transparent conducting In-Ga-Zn-O films were grown successfully on glass substrates at room temperature by RF magnetmn sputtering. The effects of different deposition power on the structure, electrical and optical properties have been investigated systemically. The results of X-ray diffraction spectra （XRD） show that the films with different power were amorphous. The growth speed increases linearly and the electrical resistivity decreases gradually as the deposition power increasing from 80 W to 150 W. Optical transmission spectra of the In-Ga-Zn-O samples demonstrate that the abrupt absorption edge of the film appears at about 350 nm, implying high quality of the In-Ga-Zn-O film prepared at different deposition power mentioned above. The optical band gap of In-Ga-Zn-O films decreases as the deposition power increasing. All the films present a high transmittance of above 90% in the visible range from 500 nm to 800 nm.