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中文摘要：
采用磁控溅射法和脉冲激光沉积法,在SrTiO3（001）衬底上制备了La0.5Sr0.5CoO3（70 nm）/Pb（Zr0.4Ti0.6）O3（70 nm）/La0.5Sr0.5CoO3（70 nm）（LSCO/PZT/LSCO）铁电电容器异质结。X射线衍射结果表明：LSCO和PZT薄膜均为外延结构。在5 V的外加电压下,LSCO/PZT/LSCO电容器具有较低的矫顽电压（0.49 V）,较高的剩余极化强度（41.7μC/cm^2）和较低的漏电流密度（1.97×10^-5A/cm^2）,LSCO/PZT/LSCO电容器的最大介电常数为1073。漏电流的分析表明：当外加电压小于0.6 V时,电容器满足欧姆导电机制;当外加电压大于0.6 V时,符合空间电荷限制电流（SCLC）导电机制。
英文摘要：
La0.5Sr0.5CoO3（70 nm）/Pb（Zr0.4Ti0.6）O3（70 nm）/La0.5Sr0.5CoO3（70 nm）（LSCO/PZT/LSCO） capacitor was fabricated on SrTiO3（001） substrate by RF magnetron sputtering and pulsed laser deposition（PLD） method.X-ray diffraction（XRD） shows that both LSCO and PZT thin films are epitaxial structures.It is found that the coercive voltage,remnant polarization,leakage current density and the maximum dielectric constant of LSCO/PZT/LSCO capacitor measured at the voltage of 5 V are 0.49 V,41.7 μC/cm^2,1.97×10^-5 A/cm^2,1073,respectively.Leakage current density of the LSCO/PZT/LSCO capacitor is further investigated,which meets ohmic behavior at lower voltage（〈0.6 V） and agrees well with the space-charge-limited current（SCLC） theory at higher voltage（〉0.6 V）.
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