中文摘要：

应用非晶的Ti-Al薄膜为导电阻挡层,采用射频磁控溅射法和溶胶-凝胶法在Si衬底上制备了La0.5Sr0.5CoO3/Pb（Zr0.4,Ti0.6）O3/La0.5Sr0.5CoO3/Ti-Al/Si（LSCO/PZT/LSCO/Ti-Al/Si）异质结,研究了550℃常规退火（CTA）和快速退火（RTA）工艺对LSCO/PZT/LSCO/Ti-Al/Si结构和性能的影响。实验发现非晶Ti-Al薄膜在经过不同退火工艺后仍具有非晶结构,快速退火6min的样品具有较好的物理性能。在418kV/cm的外加电场下,LSCO/PZT/LSCO电容器的剩余极化强度和矫顽电场强度分别为22μC/cm2和83kV/cm。LSCO/PZT/LSCO电容器的漏电行为不依赖于退火工艺,当电场强度低于46.7kV/cm时为欧姆导电,高于46.7kV/cm时为肖特基导电机制。

英文摘要：

La0.5Sr0.5CoO3/Pb（Zr0.4,Ti0.6）O3/La0.5Sr0.5CoO3/Ti-Al/Si （LSCO/PZT/LSCO/Ti-Al/Si） heterostructure was fabricated on Si substrate by RF magnetron sputtering and sol-gel methods,using amorphous Ti-Al films as barrier layer.The effect of annealing conditions （550 ℃ using conventional thermal annealing （CTA） and rapid thermal annealing （RTA）） on the structural and physical properties of Si-based Pb（Zr0.4,Ti0.6）O3 ferroelectric capacitors were investigated.It is found that amorphous Ti-Al film is still amorphous after high temperature annealing,and RTA for 6 min can yield the best physical results for the LSCO/PZT/LSCO capacitor,whose remnant polarization and coercive electric field are 22 μC/cm2 and 83 kV/cm,respectively.Moreover,it is also found that leakage mechanism of LSCO/PZT/LSCO capacitor does not depend on the annealing conditions.It is Ohmic conduction at applied fields smaller than 46.7 kV/cm,and Schottky conduction at fields higher than 46.7 kV/cm.