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中文摘要：
报道了用分子束外延（MBE）方法生长的掺杂InGaAs吸收层PINInP／InGaAs,／InP双异质结外延材料，通过干法刻蚀和湿法腐蚀相结合制作台面、硫化和聚酰亚胺钝化、电极生长等工艺，制备了128×1台面正照射InGaA。探测器阵列．测试了器件的变温I-V、响应光谱和探测率，在278K时平均峰值探测率为1．03×10^12cmHz^1/2W^-1．实现了128元InGaAs探测器阵列与CTIA结构L128读出电路相互连，经封装后，在室温（291K）时成功测出128元响应信号．焦平面响应的不均匀性为18．3％，并对不均匀性产生的原因进行了分析．
英文摘要：
Based on doped-InGaAs absorbing layer in MBE-grown p-InP/n-lnGaAs/n-InP double-heterostructure epitaxial materials, 128 × 1 front-illuminated mesa InGaAs detector arrays were made with the technics of mesa-making by dry and wet etching, passivation by sulfidation and polyimide, growth of electrode and so on. 1- V curves, response spectra and detectivity of the devices were measured. The mean peak detectivity of the detectors is 1.03 ×10^12 cmHz^1/2W^-1 at 278K. 128 element InGaAs detector arrays are connect with CTIA-structure L128 read out integrate circuits. The response signals of the 128 elements were successfully measured at room temperature （291K） after packaged. The ununiformity of response is 18.3% , and the reasons of the ununinformity are discussed.
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