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中文摘要：
利用激光诱导电流技术研究了InGaAs台面探测器的相邻探测器间的串音和光敏感区。用分子束外延方法生长掺杂InGaAs的PIN InP／InGaAs／InP外延材料，制备了256×1正照射台面InGaAs线列探测器。测试结果表明，InGaAs线列探测器相邻探测器间没有串音，虽然台面结构周围吸收层已被腐蚀，但因为少数载流子的侧向收集，扩大了有效光敏感区。
英文摘要：
The crosstalk and photoactive area of neighbor mesa InGaAs detectors are studied by LBIC technique. Based on doped-InGaAs MBE-grown PIN InP/InGaAs/InP epitaxial materials, 256×1 front- illuminated mesa In GaAs detector arrays are made . Measurement results show that there are no crosstalk between neighbor mesa InGaAs detectors. Photoactive area of InGaAs detector is extended because of the side- collecting of minority carriers, though absorbing layer around mesa structure was etched.
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