中文摘要：

首次介绍了采用AIN介质薄膜为钝化层的InGaAs台面型探测器（λ0=2．4μm）。探测器采用分子束外延（MBE）方法生长的原位掺杂的PIN In0．78Ga0.22As／In0．78Ga0.22As/InxGa1-xAs／InP外延材料。由于台面型器件的裸露面积较大，特别是台面的成形工艺所带来的侧面损伤，加大了光生载流子的表面复合，使器件的暗电流、噪声等性能急剧下降。采用新的AIN钝化工艺，制备了8元正照射台面InGaAs探测器，室温下（T=300K）电压为-0．5V时，探测器的暗电流（ID）约为9×10^-8A，优值因子（RoA）大于30Ωcm^2，通过与其他钝化工艺所制备的器件的性能进行分析对比得出：A1N能有效地改善器件的表面状态，减小表面复合，从而降低了暗电流，提高了探测器的性能。

英文摘要：

The mesa InGaAs detector using AIN passivation layer at the extended wavelength（cutoff wavelength of 2.4 μm） was investigated for the first time. The detector arrays were fabricated using an epitaxial material grown by gas source molecular beam epitaxy （GSMBE） over a semi-insulating （SI） InP wafer. Because of the large exposed mesa surface, especially for the damage on side surface of the mesa, which was brought by form fabrication, the surface recombination was increased by optoelectronic induced carrier, and the performance of the detector, dark current and noise etc. was deteriorated sharply. An innovated AIN passivation layer for the mesa structured InGaAs detector was proposed and an 8 elements In078Ga0.22As detector array was fabricated. The dark-current performance achieved was as low as 9×10^-8 A （-0.5 V） and the R0 A was greater than 30 Ωcm^2 at room temperature 300 K. The performance of the detector was compared with other devices＇ using passivation fabrication.It is showed that the AIN passivation layer reforms surface state of devices, reduces surface recombination effectively, sequentially,reduces the dark current, and improves performance.